sot223 pnp silicon planar medium power high gain transistor issue 3 - october 1995 features * very low equivalent on-resistance; r ce(sat) 125m w at 2a * gain of 200 at i c =1 amp and very low saturation voltage applications * dc-dc converters, siren drivers. complementary type - fzt690b partmarking detail - FZT790A absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5 v peak pulse current i cm -6 a continuous collector current i c -3 a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. breakdown voltages v (br)cbo -50 -70 v i c =-100 m a v (br)ceo -40 -60 v i c =-10ma* v (br)ebo -5 -8.5 v i e =-100 m a collector cut-off current i cbo -0.1 -10 m a m a v cb =-30v v cb =-30v, tamb =100c emitter cut-off current i ebo -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.15 -0.30 -0.40 -0.25 -0.45 -0.75 v v v i c =-500ma, i b =-5ma* i c =-1a, i b =-10ma* i c =-2a, i b =-50ma* base-emitter saturation voltage v be(sat) -0.8 -1.0 v i c =-1a, i b =-10ma* base-emitterturn-onvoltage v be(on) -0.75 v i c =-1a, v ce =-2v* static forward current transfer ratio h fe 300 250 200 150 800 i c =-10ma, v ce =-2v i c =-500ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* transition frequency f t 100 mhz i c =-50ma, v ce =-5v f=50mhz output capacitance c obo 24 pf v cb =-10v,f=1mhz switching times t on t off 35 600 ns ns i c =-500ma, i b1 =-50ma, i b2 =-50ma, v cc =-10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FZT790A 0.01 0.1 1 10 0.8 0.6 0 1.6 0.01 0.1 1 10 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v - ( v olts) v ce(sat) v i c i c - collector current (amps) v - (volts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - n orm alised gain v - ( v olts) 750 500 250 h - t ypic al gain t amb =25c -55c +25c +100c +175c 0 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 v - (volts) -55c +25c +100c +175c 1.8 1.4 1.2 1.0 0.4 0.2 0.8 0.6 0 1.6 1.8 1.4 1.2 1.0 0.4 0.2 i c /i b =10 i c /i b =100 i c /i b =40 i c /i b =100 v ce =2v i c /i b =100 v ce =2v -55c +25c +100c +100c +25c -55c 1 0.1 safe operating area v ce - collector emitter voltage (v) 10 100 1s dc 100ms 10ms 100 m s 1ms 1 0.01 0.1 10 FZT790A 3 - 249 3 - 248 c c e b
sot223 pnp silicon planar medium power high gain transistor issue 3 - october 1995 features * very low equivalent on-resistance; r ce(sat) 125m w at 2a * gain of 200 at i c =1 amp and very low saturation voltage applications * dc-dc converters, siren drivers. complementary type - fzt690b partmarking detail - FZT790A absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5 v peak pulse current i cm -6 a continuous collector current i c -3 a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. breakdown voltages v (br)cbo -50 -70 v i c =-100 m a v (br)ceo -40 -60 v i c =-10ma* v (br)ebo -5 -8.5 v i e =-100 m a collector cut-off current i cbo -0.1 -10 m a m a v cb =-30v v cb =-30v, tamb =100c emitter cut-off current i ebo -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.15 -0.30 -0.40 -0.25 -0.45 -0.75 v v v i c =-500ma, i b =-5ma* i c =-1a, i b =-10ma* i c =-2a, i b =-50ma* base-emitter saturation voltage v be(sat) -0.8 -1.0 v i c =-1a, i b =-10ma* base-emitterturn-onvoltage v be(on) -0.75 v i c =-1a, v ce =-2v* static forward current transfer ratio h fe 300 250 200 150 800 i c =-10ma, v ce =-2v i c =-500ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* transition frequency f t 100 mhz i c =-50ma, v ce =-5v f=50mhz output capacitance c obo 24 pf v cb =-10v,f=1mhz switching times t on t off 35 600 ns ns i c =-500ma, i b1 =-50ma, i b2 =-50ma, v cc =-10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FZT790A 0.01 0.1 1 10 0.8 0.6 0 1.6 0.01 0.1 1 10 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v - ( v olts) v ce(sat) v i c i c - collector current (amps) v - (volts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - n orm alised gain v - ( v olts) 750 500 250 h - t ypic al gain t amb =25c -55c +25c +100c +175c 0 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 v - (volts) -55c +25c +100c +175c 1.8 1.4 1.2 1.0 0.4 0.2 0.8 0.6 0 1.6 1.8 1.4 1.2 1.0 0.4 0.2 i c /i b =10 i c /i b =100 i c /i b =40 i c /i b =100 v ce =2v i c /i b =100 v ce =2v -55c +25c +100c +100c +25c -55c 1 0.1 safe operating area v ce - collector emitter voltage (v) 10 100 1s dc 100ms 10ms 100 m s 1ms 1 0.01 0.1 10 FZT790A 3 - 249 3 - 248 c c e b
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